leshan radio company, ltd. lmbt3904lt1g 2 emitter 3 collector 1 base sot?23 maximum ratings rating symbol v alue unit collector?emitter voltage v ceo 40 vdc collector?base voltage v cbo 60 vdc emitter?base voltage v ebo 6.0 vdc collector current ? continuous i c 200 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j ,t stg ?55 to +150 c electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage(3) v (br)ceo 40 ? vdc (i c = 1.0 madc) collector?base breakdown voltage v (br)cbo 60 ? vdc (i c = 10 adc) emitter?base breakdown voltage v (br)ebo 6.0 ? vdc (i e = 10 adc) base cutoff current i bl ? 50 nadc ( v ce = 30 vdc, v eb = 3.0 vdc, ) collector cutoff current i cex ? 50 nadc ( v ce = 30vdc, v eb = 3.0vdc ) 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. ? pb?free package may be available. the g?suffix denotes a pb?free lead finish device marking shipping lmbt3904lt1g 1am 3000/tape & reel lmbt3904lt3g 1am 10000/tape & reel general purpose transistor ordering information ? compliance with rohs we declare that the material of product requirements. 1 2 3 rev.o 1/7 s-lmbt3904lt1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lmbt3904lt1g s-lmbt3904lt3g
leshan radio company, ltd. lmbt3904lt1g,s-lmbt3904lt1g electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (3) dc current gain(1) h fe ?? (i c =0.1 madc, v ce =1.0 vdc) 40 ?? (i c = 1.0 madc, v ce = 1.0 vdc) 70 ?? (i c = 10 madc, v ce = 1.0 vdc) 100 300 (i c = 50madc, v ce = 1.0vdc) 60 ?? (i c = 100madc, v ce =1.0 vdc) 30 ?? collector?emitter saturation voltage v ce(sat) vdc (i c = 10 madc, i b = 1.0 madc)(3) ?? 0.2 (i c = 50 madc, i b = 5.0madc) ?? 0.3 base?emitter saturation voltage(3) v be(sat) vdc (i c = 10 madc, i b = 1.0madc) 0.65 0.85 (i c = 50madc, i b = 5.0madc ) ?? 0.95 small?signal characteristics current?gain ? bandwidth product f t 300 ? ? mh z (i c = 10madc, v ce = 20vdc, f = 100mhz) output capacitance (v cb = 5.0vdc, i e = 0, f = 1.0 mhz) c obo ?? 4.0 pf input capacitance c ibo ?? 8 .0 pf (v eb = 0.5vdc, i c = 0, f = 1.0 mhz) input impedancen h ie 1.0 10 (v ce = 10vdc, i c = 1.0madc, f = 1.0 khz) voltage feedback ratio h re 0.5 8.0 x10 ?4 (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) small?signal current gain h fe 100 400 ? (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) output admittance h oe 1.0 40 (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) noise figure nf ? 5.0 db (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k ? , f = 1.0 khz) switching characteristics delay time (v cc = 3.0 vdc,v be = ?0.5vdc t d ?35 ns rise time i c = 10 madc, i b1 = 1.0madc) t r ?35 storage time (v cc = 3.0vdc, t s ? 200 fall time i c = 10 madc,i b1 = i b2 = 1 . 0 madc) t f ?5 0 ns 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. k mhos rev.o 2/7
leshan radio company, ltd. typical transient characteristics figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns -0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns -9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c figure 3. capacitance figure 4. charge data figure 5. turn ? on time i c , collector current (ma) 70 100 200 300 500 50 figure 6. rise time i c , collector current (ma) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t , rise time (ns) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r v cc = 40 v i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v rev.o 3/7 lmbt3904lt1g,s-lmbt3904lt1g
leshan radio company, ltd. figure 7. storage time i c , collector current (ma) figure 8. fall time i c , collector current (ma) 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t , fall time (ns) f t , storage time (ns) s v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 i c /i b = 20 i c /i b = 10 i c /i b = 20 t s = t s - 1 / 8 t f i b1 = i b2 typical audio small ? signal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 9. f, frequency (khz) 4 6 8 10 12 2 0.1 figure 10. r s , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 500 i c = 100 a source resistance = 1.0 k i c = 50 a h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25 c) figure 11. current gain i c , collector current (ma) 70 100 200 300 50 figure 12. output admittance i c , collector current (ma) h , current gain h , output admittance ( mhos) 30 100 50 5 10 20 oe 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe rev.o 4/7 lmbt3904lt1g,s-lmbt3904lt1g
leshan radio company, ltd. figure 15. dc current gain typical static characteristics i c , collector current (ma) 10 100 1000 0.1 h , dc current gain 10 1 100 1.0 1000 fe v ce = 1.0 v t j = +150 c +25 c -55 c figure 13. input impedance i c , collector current (ma) figure 14. voltage feedback ratio i c , collector current (ma) 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 -4 figure 16. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma rev.o 5/7 lmbt3904lt1g,s-lmbt3904lt1g
leshan radio company, ltd. figure 17. collector emitter saturation voltage vs. collector current figure 18. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 0.1 0.2 0.3 0.4 0.6 0.7 0.8 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 figure 19. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 0.5 i c /i b = 10 150 c 25 c ? 55 c i c /i b = 10 150 c 25 c ? 55 c v ce = 1 v 150 c 25 c ? 55 c figure 20. temperature coefficients i c , collector current (ma) -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 -1.0 -1.5 -2.0 +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) v ce (vdc) 100 10 1 0.1 0.01 0.001 0.01 0.1 1 ic (a) single pulse test @ t a = 25 c thermal limit 100 ms 1 s 10 ms 1 ms figure 21. current gain bandwidth vs. collector current i c , collector current (ma) 1000 100 10 1 0.1 10 100 1000 f t , current ? gain ? bandwidth product (mhz) v ce = 1 v t a = 25 c figure 22. safe operating area rev.o 6/7 lmbt3904lt1g,s-lmbt3904lt1g
d j k l a c b s h g v 12 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 pin 1. base 2. emitter 3. collector 0.031 0.8 sot-23 3 leshan radio company, ltd. rev.o 7/7 lmbt3904lt1g,s-lmbt3904lt1g
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